august . 20 10 . version 1 . 2 magnachip semiconductor ltd . 1 m dp 1901 C single n - channel trench mosfet 100v absolute maximu m ratings (t c = 25 o c) characteristics symbol rating unit drain - source voltage v dss 10 0 v gate - source voltage v gss 20 v continuous drain current t c =25 o c i d 36 a t c = 10 0 o c 24 a pulsed drain current i dm 144 a power dissipation t c =25 o c p d 34 w t c = 10 0 o c 14 single pulse avalanche energy (2) e as 200 mj junction and storage temperature range t j , t stg - 55~15 0 o c thermal characteristics characteristics symbol rat ing unit thermal resistance, junction - to - ambient r ja 40 o c/w thermal resistance, junction - to - case r jc 2.3 m dp 1901 single n - channel trench mosfet 10 0 v, 36 a, 22 m features ? v ds = 10 0v ? i d = 36 a @v gs = 10v ? r ds(on) < 22 m @v gs = 10v < 25 m @v gs = 6.0 v general description the m dp 1 901 uses advanced magnachip s mosfet technology, which provide s high performance in on - state resistance , fast switching performance and excellent quality . mdp 1901 is suitable device for dc/dc converters and ge neral purpose applications. s g d d g s
august . 20 10 . version 1 . 2 magnachip semiconductor ltd . 2 m dp 1901 C single n - channel trench mosfet 100v ordering information p art number temp. range package packing rohs status md p 1 901th - 55~150 o c to - 220 tube h alogen free electrical char acteristics (t c =25 o c) characteristics symbol test condition min typ max unit static characteristics drain - source breakdown voltage bv dss i d = 250a, v gs = 0v 10 0 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250a 2 . 0 2.8 4.0 drain cut - off current i dss v ds = 80 v, v gs = 0v - - 1 a gate leakage current i gss v gs = 20v, v ds = 0v - - 0 .1 drain - source on resistance r ds(on) v gs = 10v, i d = 35 a - 1 7 2 2 m t j =125 o c - 28 33 v gs = 6.0 v, i d = 20 a 19 25 forward trans conductance g fs v ds = 5v, i d = 35 a - 35 - s dynamic characteristics total gate charge q g v ds = 50 v, i d = 20 a, v gs = 10v - 75 110 nc gate - source charge q gs - 20 - gate - drain charge q gd - 18 - input capacitance c iss v ds = 3 0 v, v gs = 0v, f = 1.0mhz - 3045 - pf reverse transfer capacitance c rss - 160 - output capacitance c oss - 234 - gate resistance r g v gs =0v,v ds =0v,f=1mhz - 0.81 - turn - on delay time t d(on) v gs = 1 0v, v ds = 50 v, r l = 30 , r g = 6 - 25 40 ns rise time t r - 12 20 tu r n - off delay time t d(off) - 70 120 fall time t f - 20 35 drain - source body diode characteristics source - drain diode forward voltage v sd i s = 1 a, v gs = 0v - 0.7 1.2 v body diode reverse recovery time t rr i f = 20 a, dl/dt = 100a/s - 70 100 ns body diode reverse recovery charge q rr - 240 - nc note : 1. surface mounted rf4 board with 2oz. copper. 2. starting t j =25c, l=1mh, i as = 2 0 a, v dd = 5 0v, v gs =10v
august . 20 10 . version 1 . 2 magnachip semiconductor ltd . 3 m dp 1901 C single n - channel trench mosfet 100v fig.5 transfer characteristics fig.1 on - region characteristics fig.2 on - resistance variation with drain current and gate voltage fig.3 on - resistance variation with temperature fig.4 on - resistance variation with gate to source voltage fig.6 body diode forward voltage variation with source current and temperature 0 10 20 30 40 10 20 30 40 v gs =6.0v v gs =10v r ds(on) [m? ] i d [a] 0 1 2 3 4 5 0 20 40 60 80 100 3.5v 4.0v 4.5v 6.0v ~ 10v 5.0v i d , drain current[a] v ds , drain-source voltage [v] 0 1 2 3 4 5 0 5 10 15 20 125 *note ; vds=5.0v 25 i d [a] v gs [v] 0.0 0.2 0.4 0.6 0.8 1.0 1e-6 1e-5 1e-4 1e-3 0.01 0.1 1 10 125 25 i s [a] v sd [v] -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v gs =10v i d =35a r ds(on) , (normalized) drain-source on-resistance [m? ] t j , junction temperature [ o c] 4 6 8 10 0 10 20 30 40 50 60 70 25 125 r ds(on) [m ] v gs [v]
august . 20 10 . version 1 . 2 magnachip semiconductor ltd . 4 m dp 1901 C single n - channel trench mosfet 100v fig.7 gate charge characteristics fig.8 capacitance characteristics fig.9 maximum safe operating area fig.10 maximum drain current vs. case temper ature fig.11 transient thermal response curve 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 0.01 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z ja * r ja (t) + t a r jc =2.3 /w single pulse d=0.5 0.02 0.2 0.05 0.1 z ja , normalized thermal response [t] t 1 , rectangular pulse duration [sec] 0 5 10 15 20 25 30 35 40 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds [v] 25 50 75 100 125 150 0 10 20 30 40 i d [a] t c [ 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 100us 100ms dc 10 ms 1 ms operation in this area is limited by r ds(on) single pulse r jc =2.3 /w t a =25 i d [a] v ds [v] 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 6 7 8 9 10 * note ; i d = 20a v gs [v] q g [nc]
august . 20 10 . version 1 . 2 magnachip semiconductor ltd . 5 m dp 1901 C single n - channel trench mosfet 100v physical dimensions 3 leads , to - 220 dimensions are in millimeters unless otherwise specified
august . 20 10 . version 1 . 2 magnachip semiconductor ltd . 6 m dp 1901 C single n - channel trench mosfet 100v disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of an y product can reasonably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves the right to change the specifications and circuitry without notice at any time. magnachip does not consider responsibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered trademark of magnachip sem iconductor ltd.
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